NEO Semiconductor has announced that it has developed the "world's first 3D NAND-like DRAM cell array," which aims to increase DRAM chip density using established 3D stacking technology. Designed to ...

Neo Semiconductor has announced the world’s first 3D stackable DRAM technology, called 3D X-DRAM, that could revolutionize computer memory. Neo estimates 3D X-DRAM can achieve 128Gb density with 230 ...

For applications where performance is of primary importance, designers have traditionally chosen SRAM technology over DRAM. Although commodity DRAM offers much higher density and a lower cost per bit, ...

For decades, compute architectures have relied on dynamic random-access memory (DRAM) as their main memory, providing temporary storage from which processing units retrieve data and program code. The ...

TOKYO — Swiss-based Innovative Silicon Solutions (ISS) and the Swiss Federal Institute of Technology have developed a silicon-on-insulator based single-transistor DRAM cell prototype that will scale ...