Semiconductor Engineering

Oxides Bring Low Leakage Transistors To Leading-Edge Memories

Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.
Electronics For You

In-Memory Analog Processing For Faster HPC

Researchers at the Politecnico di Milano have developed an analog in-memory computing chip that performs computations ...
Semiconductor Engineering

An Energy-Efficient 10T SRAM In-Memory Computing Macro Architecture For AI Edge Processor

A technical paper titled “An energy-efficient 10T SRAM in-memory computing macro for artificial intelligence edge processor” was published by researchers at Atal Bihari Vajpayee-Indian Institute of ...
Electronic Design

Overcome Traditional Memory-Speed Barriers With Embedded DRAM

For applications where performance is of primary importance, designers have traditionally chosen SRAM technology over DRAM. Although commodity DRAM offers much higher density and a lower cost per bit, ...