Proper PCB layout and accurate switching timing contribute to the low noise floor. The optimized MOSFET design provides sufficiently high power-stage efficiency to allow the amplifier to run without a ...

Hexfets themselves were/are very high-speed devices which, if put into their linear operating region, could rather easily burst into parasitic RF oscillation. His concern was that if a power MOSFET ...

It is not difficult to design any old audio amplifier, but it is tough to design a good one. Two recently introduced Mosfet pairs may help by taking some of the fuss out of audio power amp design.

Conventional power amplifiers, however, experience large power loss, so there is a need for RF high-power MOSFET modules offering built-in input/output impedance-matching circuit 3 and guaranteed ...

Download this article in PDF format. Part 1 of this article showed how an active current-sink circuit can address all the requirements for testing high‑current, low-voltage power supplies ...

In response, Mitsubishi Electric has now developed a high-power silicon MOSFET (RD06LUS2) that achieves unmatched power output and high drain efficiency for commercial radios operating at 3.6V.

ROHM has developed a 30 V N-channel metal-oxide semiconductor field-effect transistor (MOSFET) — AW2K21 — in a common-source ...

Addressing a long-standing challenge in photonic integrated circuit design, researchers demonstrate that a miniature erbium-doped waveguide amplifier provides efficient and high-power optical ...