Proper PCB layout and accurate switching timing contribute to the low noise floor. The optimized MOSFET design provides sufficiently high power-stage efficiency to allow the amplifier to run without a ...

Hexfets themselves were/are very high-speed devices which, if put into their linear operating region, could rather easily burst into parasitic RF oscillation. His concern was that if a power MOSFET ...

ROHM has developed a 30 V N-channel metal-oxide semiconductor field-effect transistor (MOSFET) — AW2K21 — in a common-source ...

Conventional power amplifiers, however, experience large power loss, so there is a need for RF high-power MOSFET modules offering built-in input/output impedance-matching circuit 3 and guaranteed ...

Addressing a long-standing challenge in photonic integrated circuit design, researchers demonstrate that a miniature erbium-doped waveguide amplifier provides efficient and high-power optical ...

In response, Mitsubishi Electric has now developed a high-power silicon MOSFET (RD06LUS2) that achieves unmatched power output and high drain efficiency for commercial radios operating at 3.6V.

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect transistor (MOSFET) module ...

Download this article in PDF format. Part 1 of this article showed how an active current-sink circuit can address all the requirements for testing high‑current, low-voltage power supplies ...