We address critical physical fragility issues associated with terahertz integrated all-silicon substrateless devices. This is necessary because, although the current state-of-the-art offers excellent ...

Robust unclad terahertz waveguides and integrated components enabled by multi-mode effects and matched slot couplers Abstract: We address critical physical fragility issues associated with terahertz ...

In this article, we summarize a novel concept that combines an integrated GaN HEMT with silicon Insulated Gate Bipolar Transistors (IGBTs).