The TLP579xH series is housed in a small SO6L package, contributing to improved flexibility in component placement on the PCB ...

ROHM has developed a 30 V N-channel metal-oxide semiconductor field-effect transistor (MOSFET) — AW2K21 — in a common-source ...

The company is expanding its “GaN ecosystem” with a new family of 650-V GaN power FETs, which feature a silicon-compatible ...

A simple circuit can prevent hours of rework caused by momentary lapses of concentration when an incorrect power supply is ...

A battery backup for the solar-mains hybrid lamp design that supplies a constant light output regardless of available solar ...

DEAL Semi’s innovative asymmetrical MOSFET architecture offers performance for 150- to 200-V apps that rivals SiC and GaN at ...

The CoolSiC MOSFETs 1200 V G2 are available in two Q-DPAK configurations: a single switch and a dual half-bridge. Both variants are part of Infineon’s broader X-DPAK top-side cooling platform and are ...

Advances in LEDs and LED drivers deliver a range of improvements for automotive and horticultural LED lighting.

The TLP579xH series meets the increasing demand for gate drivers that drive high-voltage power devices from the low-voltage control side through isolation, offering more accurate performance over a ...

The SiC MOSFETs benefit from improvements to the component structure, based on the original double-trench design. Therefore, it achieves up to 40% lower on-resistance with notably higher robustness ...

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