A dual MOSFET from ROHM offers high power density, low losses, and bidirectional protection for smartphone batteries.

This paper proposes short circuit and overload gate-driver dual-protection scheme based on the parasitic inductance between the Kelvin- and power-source terminals of high-current SiC mosfet modules.

SOP Advance(E) package enables lower loss and higher efficiency for industrial equipment, data centres, and base stations ...