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In this article, a novel SiC trench MOSFET with integrated Schottky super barrier rectifier (SSBR-TMOS) is proposed and studied by TCAD simulations. The SSBR is introduced as a replacement of the body ...
The adoption of IoT enabled devices have led to higher risks of EMI issues, especially in their power management. Particularly, rectifiers for IoT devices are especially concerning. To mitigate this, ...