A dual MOSFET from ROHM offers high power density, low losses, and bidirectional protection for smartphone batteries.

The TLP579xH series is housed in a small SO6L package, contributing to improved flexibility in component placement on the PCB. Also, the new products feature a minimum creepage distance of 8mm and an ...

The TLP579xH series is housed in a small SO6L package, contributing to improved flexibility in component placement on the PCB ...

Magnachip’s 80-V MXT MV MOSFET in a TOLT package for e-scooters and LEVs delivers improvements in thermal management and power efficiency.

The TLP579xH series meets the increasing demand for gate drivers that drive high-voltage power devices from the low-voltage control side through isolation, offering more accurate performance over a ...

The CoolSiC MOSFETs 1200 V G2 are available in two Q-DPAK configurations: a single switch and a dual half-bridge. Both variants are part of Infineon’s broader X-DPAK top-side cooling platform and are ...

ROHM has developed a 30 V N-channel metal-oxide semiconductor field-effect transistor (MOSFET) — AW2K21 — in a common-source ...

A battery backup for the solar-mains hybrid lamp design that supplies a constant light output regardless of available solar ...

A simple circuit can prevent hours of rework caused by momentary lapses of concentration when an incorrect power supply is ...

We have designed a four-wheel vehicle, adopting a high-speed switching power supply circuit and power packet technology to demonstrate flexible and fault tolerant power transmission system. An energy ...

The nanosecond pulse generator, which works continuously at megahertz repetition rate, plays an important role in high-energy accelerators, electromagnetic biological effects, pulse laser modulation, ...

The SiC MOSFETs benefit from improvements to the component structure, based on the original double-trench design. Therefore, it achieves up to 40% lower on-resistance with notably higher robustness ...