IRFZ44N is a N-channel power MOSFETs with VDS max: 55 V, RDS (on) max: 17.5 mOhm, Package: TO-220, Technology: IR MOSFET™, ID max: 49 A

Description: N-channel enhancement mode TrenchMOS transistor. Manufacturer: NXP Semiconductors.

Apr 18, 2019 · The IRFZ44N is a N-channel MOSFET with a high drain current of 49A and low Rds value of 17.5 mΩ. It also has a low threshold voltage of 4V at which the MOSFET will start conducting.

View IRFZ44N by NXP USA Inc. datasheet for technical specifications, dimensions and more at DigiKey.

This article provides an overview of the IRFZ44N, including its features, applications, pin configuration, circuit design, electrical characteristics, available alternatives, and troubleshooting tips.

The IRFZ44N is an N-channel power MOSFET widely used in switching and amplification applications. It features a low on-resistance of 0.017Ω, allowing high current conduction up to 49A, with a drain …

enhancement mode transistor IRFZ44N GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device …

IRFZ44N is an N-Channel MOSFET capable of switching high voltage and current levels. It is popularly known for reliability and durability as it has a maximum drain-to-source voltage of 55v and drain …

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. …